MOSFET 2N-CH 30V 8MLP MICROFET FDMB3800N
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Description:
MOSFET 2N-CH 30V 8MLP MICROFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
FDMB3800N(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory6763,Price reference "real-time change" China/Hongkong。 FDMB3800N package/specs, Download FDMB3800N、Datasheet。